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PATOGENESI DELL' ARTROSI = PATHOGENESE DE L'ARTHROSEFRANZOSI P.1979; MINERVA MED.; ITA; DA. 1979; VOL. 70; NO 15; PP. 1099-1103Article

EXCITON-PHONON INTERACTION IN CDSFRANZOSI P.1978; PHYS. STATUS SOLIDI, B; DDR; DA. 1978; VOL. 89; NO 2; PP. K119-K122; BIBL. 16 REF.Article

A NEW FOURIER SERIES REPRESENTATION FOR THE FERMI SURFACE OF THE NOBLE METALSBOSACCHI B; FRANZOSI P.1976; J. PHYS. F.; G.B.; DA. 1976; VOL. 6; NO 4; PP. L99-L101; BIBL. 26 REF.Article

X-RAY INVESTIGATION OF CRYSTAL DEFECTS IN CZOCHRALSKI GROWN INP SINGLE CRYSTALSFRANZOSI P; GHEZZI C.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 61; NO 3; PP. 591-600; BIBL. 26 REF.Article

CYCLOTRON MASSES, ELECTRONIC SPECIFIC HEAT, AND FERMI VELOCITIES IN COPPER.BOSACCHI B; FRANZOSI P.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 12; PP. 5999-6001; BIBL. 10 REF.Article

EPITAXIAL GROWTH OF SINGLE CRYSTAL CD_1-X ZN_XS LAYERS ON (111) GAAS SUBSTRATES USING THE CLOSE-SPACED GEOMETRYFRANZOSI P; GHEZZI C; GOMBIA E et al.1978; J. CRYST. GROWTH; NLD; DA. 1978; VOL. 44; NO 3; PP. 306-314; BIBL. 22 REF.Article

AC ADMITTANCE OF CDZNS/P-GAAS HETEROJUNCTIONSFRANZOSI P; GOMBIA E; GHEZZI C et al.1982; APPL. PHYS., A SOLIDS SURF.; ISSN 0721-7250; DEU; DA. 1982; VOL. 29; NO 4; PP. 225-231; BIBL. 17 REF.Article

TEMPERATURE VARIATION OF REFRACTIVE INDEX IN GASEANTONIOLI G; BIANCHI D; FRANZOSI P et al.1979; APPL. OPT.; USA; DA. 1979; VOL. 18; NO 22; PP. 3847-3850; BIBL. 11 REF.Article

PHOTOLUMINESCENT PROPERTIES OF HETEROEPITAXIAL CD_1-XZN_XS SINGLE-CRYSTAL LAYERSANTONIOLI G; BIANCHI D; FRANZOSI P et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 70; NO 1; PP. 71-83; BIBL. 33 REF.Article

CRYSTAL DEFECTS IN CD_1-XZN_XS/GAAS HETEROSTRUCTURES PREPARED BY VAPOUR PHASE CHEMICAL TRANSPORTFRANZOSI P; GHEZZI C; GOMBIA E et al.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 51; NO 2; PP. 314-322; BIBL. 31 REF.Article

Investigation of the interface grading in III-V heterostructures by double-crystal diffractometryFERRARI, C; FRANZOSI, P.Journal of applied physics. 1989, Vol 65, Num 4, pp 1544-1549, issn 0021-8979, 6 p.Article

Investigation of crystal defects in III-V heterostructures by X-ray topography and electron microscopyFRANZOSI, P.Journal of crystal growth. 1993, Vol 126, Num 1, pp 109-124, issn 0022-0248Conference Paper

X-ray diffuse scattering by composition waves in GaAlAsBOCCHI, C; FRANZOSI, P; GHEZZI, C et al.Journal of applied physics. 1985, Vol 57, Num 10, pp 4533-4538, issn 0021-8979Article

Electron-beam-induced dislocations in gaAs and InP single crystalsFRANZOSI, P; LAZZARINI, L; SALVIATI, G et al.Journal of applied physics. 1989, Vol 66, Num 7, pp 2947-2951, issn 0021-8979, 5 p.Article

Lattice strain relaxation in GaAs/InP(001) and GaAs/GaP(001) heterostructuresFRANCESIO, L; FRANZOSI, P; ATTOLINI, G et al.Solid state communications. 1996, Vol 97, Num 9, pp 781-783, issn 0038-1098Article

Study of microdefects in GaAs by X-ray diffuse scatteringFRANZOSI, P.Journal of crystal growth. 1993, Vol 126, Num 1, pp 85-90, issn 0022-0248Conference Paper

Crystal quality investigation of InGaAs/InP and InGaAlAs/InP single heterostructures grown by molecular-beam epitaxyFERRARI, C; FRANZOSI, P; GASTALDI, L et al.Journal of applied physics. 1988, Vol 63, Num 8, pp 2628-2632, issn 0021-8979, 1Article

Experimental study of misfit dislocations in InP-based heterostructuresFRANZOSI, P; SCAFFARDI, M; GENOVA, F et al.Materials letters (General ed.). 1989, Vol 7, Num 11, pp 404-406, issn 0167-577XArticle

Inclusion-like defects in InP substrates and related defects in heteroepitaxial and Zn diffused layersFRANZOSI, P; SALVIATI, G; SCAFFARDI, M et al.Journal of crystal growth. 1988, Vol 91, Num 1-2, pp 90-96, issn 0022-0248Article

Structural characterization of Hg_O.78Cd_0.22Te/CdTe LPE heterostructures grown from Te solutionsBERNARDI, S; BOCCHI, C; FERRARI, C et al.Journal of crystal growth. 1991, Vol 113, Num 1-2, pp 53-60, issn 0022-0248Article

Misfit dislocations in InGaAs/InP MBE single heterostructuresFRANZOSI, P; SALVIATI, G; GENOVA, F et al.Journal of crystal growth. 1986, Vol 75, Num 3, pp 521-534, issn 0022-0248Article

Inclusion-like defects in Czochralski grown InP single crystalsFRANZOSI, P; SALVIATI, G; COCITO, M et al.Journal of crystal growth. 1984, Vol 69, Num 2-3, pp 388-398, issn 0022-0248Article

Identification of individual and aligned microdefects in bulk vertical Bridgman- and liquid encapsulated Czochralski-grown GaAsWEYHER, J. L; SCHOBER, T; SONNENBERG, K et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1998, Vol 55, Num 1-2, pp 79-85, issn 0921-5107Article

Investigation of GaInAs/InP superlattices by electron microscopy, x-ray diffraction and spectroscopic ellipsometryAMIOTTI, M; GUIZZETTI, G; PATRINI, M et al.Semiconductor science and technology. 1995, Vol 10, Num 4, pp 492-499, issn 0268-1242Article